IXTY01N100D
ผู้ผลิต:
ไอซีเอส
คําอธิบาย:
มอสเฟต N-CH 1000V 400MA TO252AA
ประเภท:
ผลิตภัณฑ์เซมิคอนดักเตอร์แบบแยกส่วน
รายละเอียด
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Vgs(th) (Max) @ Id:
4.5V @ 25µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
5.8 nC @ 5 V
Rds On (Max) @ Id, Vgs:
80Ohm @ 50mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
100 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Depletion
Supplier Device Package:
TO-252AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
400mA (Tc)
Power Dissipation (Max):
1.1W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTY01
คําแนะนํา
N-Channel 1000 V 400mA (Tc) 1.1W (Ta), 25W (Tc) การติดตั้งพื้นผิว TO-252AA
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|
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